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| STT800GKXXPT Thyristor-Thyristor Modules Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Colerance:+0.5mm Dimensions in mm (1mm=0.0394") STT800GK08PT STT800GK12PT STT800GK14PT STT800GK16PT STT800GK18PT Symbol ITAV ITRMS ITSM It VDRM, VRRM VDSM, VRSM 2 Test Conditions tif ier Maximum Ratings 800 1256 30.0 35.0 4500 6125 1000/1800 1100/1900 100 Unit A A TC=85oC; 180o half sine wave,50HZ TC=85oC; 180 o Full cycle sine wave,50HZ TVJ=TVJM 180o half sine wave,50HZ single pulse; TC =25oC VR=0; TVJ=TVJM Gate pulse;20V,5W TC =25oC 1us rise time,500us TVJ=TVJM 180o half sine wave,50HZ ;Gate open TVJ=TVJM 180o half sine wave,50HZ ;single pulse,Gate open A A2s re c non repetitive, IT=ITAVM t=1min t=1s TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=1A diG/dt=1A/us (dv/dt)cr PGM PGAV repetitive, IT=960A 200 1000 40 6 5 -40...+140 140 -40...+125 3000 3600 4.5-7/40-60 11-13/97-115 3249 A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM TVJ=TVJM TVJ=TVJM V/us W W V o Si VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA Mounting torque (M6) Terminal connection torque (M8) C V~ Nm/lb.in. g Typ. P1 (c)2009 Sirectifier Electronics Technology Corp. www.sirectifier.com STT800GKXXPT Thyristor-Thyristor Modules Symbol IRRM VT VTO rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a VD=12V ; VD=12V ; TVJ=TVJM; TVJ=TVJM; o Test Conditions TVJ=TVJM; VR=VRRM IT=1200A; TVJ=25 C For power-loss calculations only (TVJ=TVJM) TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM VD=2/3VDRM o o Characteristic Values 70 1.55 0.9 0.21 2.5 3.5 300 400 0.5 10 Unit mA V V m V mA V mA mA mA us us K/W K/W mm mm m/s2 TVJ=25 C; tp=30us; VD=12V IG=1A; diG/dt=1A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=1A; diG/dt=1A/us o TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM DC current DC current Creepage distance in air re c APPLICATIONS * Motor control, softstarter * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Solid state switches Creeping distance on surface Maximum allowable acceleration Si FEATURES * International standard package * Copper base plate * * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs complian P2 (c)2009 Sirectifier Electronics Technology Corp. tif ier 1000 500 10 typ. 200 0.0405 0.01 12.7 9.6 59.81 ADVANTAGES * Simple mounting * Improved temperature and power cycling * Reduced protection circuits www.sirectifier.com STT800GKXXPT Thyristor-Thyristor Modules Tj=25 oC Tj=Tj max 1200 Mean on-state current- IT(AV) . A 10000 On-state current- IT . A 1000 800 600 400 200 0 50 8000 6000 4000 2000 0 0 0.5 1 1.5 2 2.5 3 . o=180o . o=120o . o=90o . o =60o . o =30o . o -angle of conduction sinusoidal current waveforms 60 70 80 90 100 110 120 130 Forward Voltage- V . V F Fig 1 On-state characteristics 1500 Mean on-state current- IT(AV) . A Mean on-state power dissipation-p T(AV) . w 1000 500 re c 70 Case temperature- TC . O C . o -angle of conduction Rectangular current waveforms 0 50 60 80 90 100 tif ier . o=180o . o=120o . o=90o . o =60o . o =30o DC Case temperature- TC . O C Fig 2 Mean on-state ITAV vs. Case temperature TC for sinusoidal current waveforms at different conduction angles,f=50H z 3000 2500 . o=30o . o=60o . o=90o o . o =120o . o =180 2000 1500 1000 500 0 . o -angle of conduction sinusoidal current waveforms 200 Mean on-state current-IT(AV) . A 110 120 130 0 400 600 800 1000 1200 for rectangular current waveforms at different conduction angles and for DC, f=50H z Fig 3 Mean on-state ITAV vs. Case temperature TC Fig 4 Mean on-state power dissipation PTAV vs. Mean on-state current ITAV for sinusoidal current waveforms at different conduction angles,f=50Hz Mean on-state power dissipation-p T(AV) . w Si 3500 3000 2500 DC . o=30o . o=60o . o=90o o . o =120o . o =180 2000 1500 1000 500 0 0 200 400 . o -angle of conduction Rectangular current waveforms Mean on-state current-IT(AV) . A 600 800 1000 1200 Fig 5 Mean on-state power dissipation PTAV vs. Mean on-state current ITAV for rectangular current waveforms at different conduction angles and for DC, f=50H z P3 (c)2009 Sirectifier Electronics Technology Corp. www.sirectifier.com STT800GKXXPT Thyristor-Thyristor Modules 0.045 O Transient thermal impedance .Z thjc . C/W 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 10 -3 10 -2 10 -1 Time- t . s UFGM ,B 8 7 6 5 4 3 2 1 4 3 2 1 tif ier Fig 7 Gate characteristic 10 0 10 1 10 2 10 3 0 0 1 2 3 4 5 6 7 8 Fig 6 Transient thermal impedance junction to case Z thjc per arm for DC I FGM ,A 9 10 Si P4 (c)2009 Sirectifier Electronics Technology Corp. www.sirectifier.com re c |
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